Physical insight into fractional power dependence of saturation current on gate voltage in advanced short channel MOSFETS (alpha-power law model)

Proceedings of the International Symposium on Low Power Electronics and Design, Digest of Technical Papers

Volumn , Issue , 2002, Pages 13-18

  Im, Hyunsik ^a,b   Song, M ^b   Hiramoto, T ^a,c   Sakurai, T ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b Dongguk University   (South Korea)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

power model; MOSFET modeling; Saturation current

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC NETWORK PARAMETERS; ELECTRIC NETWORK SYNTHESIS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; MOSFET DEVICES; POWER CONTROL; SEMICONDUCTOR DEVICE MODELS;

ALPHA-POWER LAW MODEL; DRAIN CURRENT; FRACTIONAL POWER DEPENDENCE; GATE VOLTAGE; SATURATION CURRENT;

POWER ELECTRONICS;

EID: 0036957664     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. K. Chen et al, "An accurate semi-empirical saturation drain current model for LDD N-MOSFET", IEEE Electron Device Lett., vol 17, 1996, pp. 145.
2. K.Y. Toh, Ping-Keung Ko, and R. Meyer, "An engineering model for short channel MOS devices", IEEE J. Solid State Circuits, vol 23, 1988, pp.950-958.
3. T.Sakurai and A.R.Newton, "Alpha power law MOSFET model and its applications to CMOS inverter delay and other formulas", IEEE J. Solid State Circuits, vol 25, 1990, pp. 584-594.
4. S. Takagi, M. Iwase, and A. Toriumi, "On universality of inversion-layer mobility in n- and p-channel MOSFETs", IEDM technical Digest, 1988, pp. 398-401.
5. G. W. Taylor, "Velociyu-saturated characteristics of short channel MOSFETs", AT&T Bell Lab. Tech. Hournal, vol 63, 1984, pp. 1325-1404.
6. D.M. Caughey and R.E.Thomas, "Carrier mobilities in Silicon empirically related to doping and field", Proc. IEEE, vol 55, 1967, pp. 35.
7. C.G.Sodini et al, "Effect of high fields on MOS performance", IEEE Trans. Electron Devices, ED-31, 1984, pp. 1386-1393.
8. J. G. J. Chern, P. Chang, R. F. Motta, and N. Godinho, "A new method to determine MOSFET channel length", IEEE Electron Lett. ED-1, 1980, p. 170.
9. Hyunsik Im, T. Inukai, H. Gomyo, T. Hiramoto, and T. Sakurai, "VTCMOS characteristics and its optimum conditions predicted by a compact analytical model", Proceeding of ISLPED, CA, 2001, pp. 123-128.
10. Y.Taur and T.H.Ning, "Fundamentals of Modern VLSI Devices", Cambridge University Press, 1998, chapter 3.