Sulfur segregation and surface-energy-induced selective growth in ultra-thin 3% silicon-iron alloys

Materials Science Forum

Volumn 408-412, Issue I, 2002, Pages 967-972

  Choi, Y S ^a   Kim, S B ^a   Cho, S S ^a   Chai, K H ^a   Oh, J M ^a   Heo, N H ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

3 Silicon Iron Alloy; Segregation Kinetics; Selective Growth; Sulfur; Surface Energy

Indexed keywords

ANNEALING; GRAIN GROWTH; INTERFACIAL ENERGY; SEGREGATION (METALLOGRAPHY); SULFUR;

INTERFACIAL SEGREGATION;

SILICON ALLOYS;

EID: 0036956835     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.408-412.967     Document Type: Conference Paper

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