High-temperature annealing of bulk GaN layers

Technical Physics Letters

Volumn 28, Issue 12, 2002, Pages 994-996

  Bessolov, V N ^a,b,c   Zhilyaev, Yu V ^a,b,c   Kompan, M E ^a,b,c   Konenkova, E V ^a,b,c   Kukushkin, S A ^a,b,c   Mesh, M V ^a,b,c   Raevskii S D ^a,b,c   Fradkov, A L ^a,b,c   Fedirko, V A ^a,b,c  

^a IOFFE INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c MOSCOW STATE UNIVERSITY OF TECHNOLOGY STANKIN   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036953592     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1535513     Document Type: Article

References (6)

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