Standby power management for a 0.18μm microprocessor

Proceedings of the International Symposium on Low Power Electronics and Design, Digest of Technical Papers

Volumn , Issue , 2002, Pages 7-12

  Clark, Lawrence T ^a   Demmons, Shay ^a   Deutscher, Neil ^a   Ricci, Franco ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Body effect; Low power; Microprocessors

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; MICROELECTRONICS; MICROPROCESSOR CHIPS; POWER CONTROL; STANDBY POWER SYSTEMS;

CURRENT REDUCTION FACTOR; LOW POWER MICROPROCESSOR; STATIC POWER DISSIPATION;

POWER ELECTRONICS;

EID: 0036949550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/566408.566413     Document Type: Conference Paper

References (9)

1. S. Thompson, IEDM '99 tutorial.
2. S. Mutoh et. Al., IEEE J. of Solid-State Circuits, 30 (1995) 847.
3. S. Wolf, Silicon Processing for the VLSI Era: Volume 3 - The Submicron MOSFET, 1995
4. H. Mizuno et al., J. Solid-State Circuits, 34 (1999) 1492.
5. S. Thompson et al., Proc. 1997 Symp. VLSI Tech. Symp., June 10-12 1997, 69.
6. K. Ishibashi, 2001 VLSI Circuit Symp. Short Course.
7. M. Bohr, et al., Proc. IEDM 1998, 197.
8. L. Clark, et al., JSSCC, 36 (2001) 1599.
9. L. Clark, Proc. 1999 VLSI Circuit Symp., 61.