Charge transport in silicon nitride/silicon oxide double layers

Proceedings - International Symposium on Electrets

Volumn , Issue , 2002, Pages 122-125

  Zhang, X ^a   Sessler, G M ^b  

^a TONGJI UNIVERSITY   (China)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; OXIDATION; OXIDES; SEMICONDUCTOR DOPING; SILICON NITRIDE; SILICON WAFERS;

CHARGE TRANSPORT; SILICON OXIDE;

DIELECTRIC FILMS;

EID: 0036949313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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4. P. Günther, IEEE Trans. Electric. Insulat. 27 (1992), 698-701.
5. X. Zhang and G. M. Sessler, Appl. Phys. Lett. 78 (2001), 2757-2759.
6. G.M. Sessler (Ed), Electrets (3rd edition), Laplacian Press, 1999.
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