Defects in photovoltaic materials and the origin of failure to dope them

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 500-503

  Zunger, Alex ^a   Kilic, C ^a   Wang, L ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; ENTHALPY; SEMICONDUCTOR DOPING;

ABSORBER MATERIALS; CONDUCTION BAND; POLAR SURFACES;

PHOTOVOLTAIC CELLS;

EID: 0036948381     PISSN: 01608371     EISSN: None     Source Type: Journal    
DOI: 10.1109/PVSC.2002.1190611     Document Type: Article

References (5)

1. S.B. Zhang, S.H. Wei and A. Zunger. Phys. Rev. Lett. 84, 1232 (2000)
2. ibid Phys. Rev. B 63, 075205-1 (2001).
3. 2,” submitted to Physical Review Letters 88, 095501 (2002).
4. S.B. Zhang, S.H. Wei and A. Zunger. Appl. Phys. 83, 3192 (1998).
5. J.E. Jaffe and A. Zunger. “Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductors,” Physical Review B, Rapid Communication 64, 241304-1 (2001).