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Volumn 40, Issue 6, 2002, Pages 637-643
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Characteristics of p-type GaN films doped with isoelectronic indium atoms
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0036941155
PISSN: 05779073
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (8)
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References (12)
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