Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 379-382

  Lee, K L ^a   Chu, J ^a   Ott, J ^a   Zhu, H ^b   Ronsheim, P ^b   Kozlowski, P ^a   Saunders, P ^a   Cardone, F ^a   Koester, S ^a   Jones, E C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON MOBILITY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

CHANNEL ELECTRONS;

MOS DEVICES;

EID: 0036927915     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ken Rim, et al, VLSI Symposium, Hawaii, June 13, 2002.
2. N. Moriya, et al, Phys. Rev. Letts, Vol.71, p.883,1993
3. A. D. N. Paine, et al, J. of Material Sci., Vol.10, P.339,1999.