Protocrystalline Si:H p-type layers for maximization of the open circuit voltage in a-Si:H n-i-p solar cells

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 565-570

  Koval, R J ^a   Chen, Chi ^a   Ferreira, G M ^a   Ferlauto, A S ^a   Pearce, J M ^a   Rovira, P I ^a   Wronski, C R ^a   Collins, R W ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELLIPSOMETRY; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS;

OPEN CIRCUIT VOLTAGE; PHOTOCRYSTALLINE LAYERS; SPECTROSCOPIC ELLIPSOMETRY; THICKNESS DEPENDENT TRANSITION;

SILICON SOLAR CELLS;

EID: 0036920087     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a6.1     Document Type: Conference Paper

References (10)

1. S. Guha, J. Yang, P. Nath, and M. Hack, Appl. Phys. Lett. 49, 218 (1986).
2. A. Banerjee, X. Xu, J. Yang, and S. Guha, Appl. Phys. Lett. 67, 2975 (1995).
3. X. Deng, S.J. Jones, T. Liu, M. Izu, and S. R. Ovshinsky, Mater. Res. Soc. Symp. Proc. 467, 795 (1997).
4. S. Veprek, F. A. Sarott, and M. Ruckschloss, J. Non-Cryst. Solids 137&138, 733 (1991).
5. R. W. Collins, A. H. Clark, S. Guha, and C.-Y. Huang, J. Appl. Phys. 57, 4566 (1985).
6. J. Koh, Y. Lee, H. Fujiwara, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett. 73, 1526 (1998).
7. J. Koh, A.S. Ferlauto, P.I. Rovira, R.J. Koval, C.R. Wronski, and R.W. Collins, Appl. Phys. Lett. 75, 2286 (1999).
8. P.I. Rovira, A.S. Ferlauto, X. Niu, C.R. Wronski, and R.W. Collins, Mater. Res. Soc. Symp. Proc. 609, A19.6 (2000).
9. J. Koh, H. Fujiwara, R.J. Koval, C.R. Wronski, and R.W. Collins, J. Appl. Phys. 85, 4141 (1999).
10. R.W. Collins, H. Fujiwara, J. Koh, P. Rovira, A.S. Ferlauto, J.A. Zapien, C.R. Wronski, and R Messier, Appl. Surf. Spectroscopy 154, 217 (2000).