Electron spin resonance and electronic conductivity in moderately doped n-type microcrystalline silicon as a probe for the density of gap states

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 333-338

  Dylla, T ^a   Carius, R ^a   Finger, F ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; PARAMAGNETIC RESONANCE;

DEFECT DENSITY; MICROCRYSTALLINE SILICON;

SILICON;

EID: 0036913929     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a20.9     Document Type: Conference Paper

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