Specific features of the optical absorption edge anisotropy in In4(P2S6)3 layered crystals

Materials Research Bulletin

Volumn 37, Issue 15, 2002, Pages 2499-2507

  Kranjcec M ^a,b   Studenyak, I P ^c   Kovacs, Gy S ^c   Mitrovcij, V V ^c   Gurzan, M I ^c   Voroshilov, Yu V ^c  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b RUDER BO KOVI INSTITUTE   (Croatia)

^c UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

A. Semiconductors; B. Crystal growth; D. Defects; D. Optical properties

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL GROWTH; INDIUM COMPOUNDS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHONONS; THERMAL EFFECTS;

ELECTRON-PHONON INTERACTION;

CRYSTALS;

EID: 0036897331     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(02)00733-X     Document Type: Article

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