Preparation and fundamental optical absorption edge of In4(P2Se6)3 single crystals

Materials Research Bulletin

Volumn 34, Issue 14, 1999, Pages 2297-2307

  Kranjcec, M ^a,b   Desnica, I D ^a   Studenyak, I P ^c   Kovacs, Gy Sh ^c   Potory, M V ^c   Voroshilov, Yu V ^c   Gebesh, V Yu ^c  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b UNIVERSITY OF ZAGREB   (Croatia)

^c UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; EXCITONS; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; PHOTOCONDUCTIVITY; PHOTONS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

DOW-REDFIELD THEORY; OPTICAL TRANSITIONS; URBACH TAILS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033330979     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(00)00175-6     Document Type: Article

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