Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

Materials Science and Engineering: B

Volumn 96, Issue 3, 2002, Pages 268-274

  Ryzhikov, A S ^a   Vasiliev, R B ^a   Rumyantseva, M N ^a   Ryabova, L I ^a   Dosovitsky, G A ^a   Gilmutdinov, A M ^a   Kozlovsky, V F ^a   Gaskov, A M ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Electrical measurements; Indium oxide; Microstructure; Reactive magnetron sputtering; Tin oxide; Zinc oxide

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHASE COMPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; ZINC OXIDE;

PLASMA-FORMING GASES;

THIN FILMS;

EID: 0036894503     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00378-1     Document Type: Article

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