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Volumn 42, Issue 12, 2002, Pages 1997-2001

Open contact analysis of single bit failure in 0.18 μm technology

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; DEFECTS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036890951     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00117-8     Document Type: Article
Times cited : (6)

References (6)
  • 4
    • 0020849523 scopus 로고
    • Secondary electron emission in the scanning electron microscope
    • Seiler H. Secondary electron emission in the scanning electron microscope. J. Appl. Phys. 54(11):1983;R1-R18.
    • (1983) J Appl Phys , vol.54 , Issue.11
    • Seiler, H.1
  • 5
    • 84872093465 scopus 로고
    • Charging dynamics of dielectric irradiated by low energy electrons
    • von Seggern H. Charging dynamics of dielectric irradiated by low energy electrons. IEEE Trans. Nucl. Sci. NS-32:1985;1503-1511.
    • (1985) IEEE Trans Nucl Sci , vol.NS-32 , pp. 1503-1511
    • Von Seggern, H.1
  • 6
    • 0000192886 scopus 로고    scopus 로고
    • A time-resolved current method for the investigation of charging ability of insulator under electron-beam irradiation
    • Song Z.G., Ong C.K., Gong H. A time-resolved current method for the investigation of charging ability of insulator under electron-beam irradiation. J. Appl. Phys. 79(9):1996;7123-7129.
    • (1996) J Appl Phys , vol.79 , Issue.9 , pp. 7123-7129
    • Song, Z.G.1    Ong, C.K.2    Gong, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.