Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2069-2074

  Chen, Zhen ^a   Yuan, Hairong ^a   Lu, Da Cheng ^a   Sun, Xuehao ^a   Wan, Shouke ^a   Liu, Xianglin ^a   Han, Peide ^a   Wang, Xiaohui ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; Mobility; MOCVD; Nitrogen vacancy scattering

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCATTERING; THERMAL EFFECTS;

VACANCY SCATTERING;

GALLIUM NITRIDE;

EID: 0036890156     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00244-7     Document Type: Article

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