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Volumn 46, Issue 12, 2002, Pages 2027-2033

High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1-xGex:H layer

Author keywords

Amorphous film; MSM photodetector; Schottky contact

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLINE MATERIALS; DECOMPOSITION; ELECTRODES; HYDROGENATION; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; THERMAL EFFECTS;

EID: 0036889833     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00183-1     Document Type: Article
Times cited : (3)

References (23)
  • 1
    • 0023964598 scopus 로고
    • InGaAs PIN photodiodes on recessed semi-insulating GaAs substrates
    • Hodson P.D., Wallis R.H., Davies J.I., Shephard H.E. InGaAs PIN photodiodes on recessed semi-insulating GaAs substrates. IEE Proc. J. 135(1):1988;2-4.
    • (1988) IEE Proc. J. , vol.135 , Issue.1 , pp. 2-4
    • Hodson, P.D.1    Wallis, R.H.2    Davies, J.I.3    Shephard, H.E.4
  • 2
    • 0024749495 scopus 로고
    • High-speed AlGaAs multiple quantum well PIN photodiodes
    • Wakita K., Iotaka I., Mogi K., Kawamura Y. High-speed AlGaAs multiple quantum well PIN photodiodes. Electron. Lett. 25(22):1989;1533-1534.
    • (1989) Electron. Lett. , vol.25 , Issue.22 , pp. 1533-1534
    • Wakita, K.1    Iotaka, I.2    Mogi, K.3    Kawamura, Y.4
  • 3
    • 0023995733 scopus 로고
    • Fabrication of monolithic twin-GaInAs PIN photodiode for balanced dual-detector optical coherent receivers
    • Wada Q., Miura S., Mikawa T., Aoki O., Kiyomga T. Fabrication of monolithic twin-GaInAs PIN photodiode for balanced dual-detector optical coherent receivers. Electron. Lett. 24(9):1988;514-516.
    • (1988) Electron. Lett. , vol.24 , Issue.9 , pp. 514-516
    • Wada, Q.1    Miura, S.2    Mikawa, T.3    Aoki, O.4    Kiyomga, T.5
  • 5
    • 80051477144 scopus 로고    scopus 로고
    • Silicon-based optoelectronics
    • Silicon-based optoelectronics. MRS-Bull. 23(4):1998.
    • (1998) MRS-Bull. , vol.23 , Issue.4
  • 9
    • 0023411489 scopus 로고
    • The role of doping bonds in the transport and recombination of a-Si:Ge:H alloys
    • Street R.A., Tsai C.C., Stutzmann M., Kakalios J. The role of doping bonds in the transport and recombination of a-Si:Ge:H alloys. Phil. Mag. B56:1987;289.
    • (1987) Phil. Mag. , vol.B56 , pp. 289
    • Street, R.A.1    Tsai, C.C.2    Stutzmann, M.3    Kakalios, J.4
  • 13
    • 0011521615 scopus 로고
    • Amorphous solar cells using a-Si:H and a-SiGe:H films
    • Nakamura G., Sato K., Yukimoto Y. Amorphous solar cells using a-Si:H and a-SiGe:H films. Jpn. J. Appl. Phys. 21:1982;297.
    • (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 297
    • Nakamura, G.1    Sato, K.2    Yukimoto, Y.3
  • 14
    • 0011521616 scopus 로고
    • Correlation between medium range order and film qualities in amorphous silicon germanium alloys
    • Maramatsu S., Itoh H., Matsubara S., Konenkamp R., Watanabe T., Azuma K.et al. Correlation between medium range order and film qualities in amorphous silicon germanium alloys. Tech. Dig. PVSEC-5. 1:1990;961-964.
    • (1990) Tech. Dig. PVSEC-5 , vol.1 , pp. 961-964
    • Maramatsu, S.1    Itoh, H.2    Matsubara, S.3    Konenkamp, R.4    Watanabe, T.5    Azuma, K.6
  • 15
    • 0024779480 scopus 로고
    • The optoelectronic properties of a-Si,Ge:H(F) alloys
    • Wagner S., Chu V., Conde J.P., Liu J.Z. The optoelectronic properties of a-Si,Ge:H(F) alloys. J. Non-Cryst. Solid. 114:1989;453-458.
    • (1989) J. Non-Cryst. Solid , vol.114 , pp. 453-458
    • Wagner, S.1    Chu, V.2    Conde, J.P.3    Liu, J.Z.4
  • 16
    • 0002788837 scopus 로고
    • Optoelectronic properties and the gap state distribution in a-Si,Ge alloys
    • Fritzsche H., editor. Singapore: World Scientific
    • Aljishi S., Smith Z.E., Wagner S. Optoelectronic properties and the gap state distribution in a-Si,Ge alloys. Fritzsche H. Amorphous Silicon and Related Materials. 1989;887-938 World Scientific, Singapore.
    • (1989) Amorphous Silicon and Related Materials , pp. 887-938
    • Aljishi, S.1    Smith, Z.E.2    Wagner, S.3
  • 17
    • 0011438108 scopus 로고
    • Thermal equilibrium of surface defects in hydrogenated amorphous silicon-germanium alloys
    • Aljishi S., Jin S., Ley L., Wagner S. Thermal equilibrium of surface defects in hydrogenated amorphous silicon-germanium alloys. Phys. Rev. Lett. 65:1990;629-632.
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 629-632
    • Aljishi, S.1    Jin, S.2    Ley, L.3    Wagner, S.4
  • 18
    • 0031272867 scopus 로고    scopus 로고
    • Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction
    • Laih L.H., Wang J.C., Chen Y.A., Jen T.S., Tsay W.C., Hong J.W. Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction. Solid-State Electron. 41(11):1997;1693-1697.
    • (1997) Solid-State Electron. , vol.41 , Issue.11 , pp. 1693-1697
    • Laih, L.H.1    Wang, J.C.2    Chen, Y.A.3    Jen, T.S.4    Tsay, W.C.5    Hong, J.W.6
  • 19
    • 0033310835 scopus 로고    scopus 로고
    • Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate
    • Wataru S., Atsushi I., Shigeharu Y., Masahiro A. Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate. Jpn. J. Appl. Phys. 38:1999;6226-6231.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 6226-6231
    • Wataru, S.1    Atsushi, I.2    Shigeharu, Y.3    Masahiro, A.4
  • 20
    • 0018530869 scopus 로고
    • Optical spectra of glow discharge deposited silicon
    • Eward D., Milleville M., Weiser G. Optical spectra of glow discharge deposited silicon. Phil. Mag. B. 79:1979;291.
    • (1979) Phil. Mag. B , vol.79 , pp. 291
    • Eward, D.1    Milleville, M.2    Weiser, G.3
  • 21
    • 21544455021 scopus 로고
    • Reversible conductivity changes in discharge-produced amorphous Si
    • Staebler D.L., Wronski C.R. Reversible conductivity changes in discharge-produced amorphous Si. Appl. Phys. Lett. 31(4):1977;292-294.
    • (1977) Appl. Phys. Lett. , vol.31 , Issue.4 , pp. 292-294
    • Staebler, D.L.1    Wronski, C.R.2
  • 22
    • 0003136598 scopus 로고
    • Annealing of metastable defects in hydrogenated amorphous silicon
    • Stutzmann M., Jackson W.B., Tsai C.C. Annealing of metastable defects in hydrogenated amorphous silicon. Phys. Rev. B. 34(1):1986;63-72.
    • (1986) Phys. Rev. B , vol.34 , Issue.1 , pp. 63-72
    • Stutzmann, M.1    Jackson, W.B.2    Tsai, C.C.3
  • 23
    • 36749120083 scopus 로고
    • Schottky-barrier characteristics of metal-amorphous-silicon diodes
    • Wronski C.R., Carlson D.E., Daniel R.E. Schottky-barrier characteristics of metal-amorphous-silicon diodes. Appl. Phys. Lett. 29:1976;605.
    • (1976) Appl. Phys. Lett. , vol.29 , pp. 605
    • Wronski, C.R.1    Carlson, D.E.2    Daniel, R.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.