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Volumn 43, Issue 6, 1996, Pages 1000-1006
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An Overvoltage self-protected thyristor with a structure to predict breakover voltage
a a a a
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HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC BREAKDOWN;
ELECTRIC RESISTANCE;
ELECTRODES;
MATHEMATICAL MODELS;
OVERVOLTAGE PROTECTION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
BREAKOVER VOLTAGE;
JUNCTION AVALANCHE VOLTAGE;
OVERVOLTAGE SELF PROTECTED THYRISTOR;
PUNCHTHROUGH VOLTAGE;
THYRISTORS;
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EID: 0030170053
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.502136 Document Type: Article |
Times cited : (4)
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References (10)
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