Empirical depth profile model for ion implantation in 4H-SiC

Journal of the Korean Physical Society

Volumn 41, Issue 5, 2002, Pages

  Lee, Sang Sun ^a   Park, Sang Gyu ^a  

^a Hanyang University   (South Korea)

Author keywords

4H SiC; Ion implantation; Pearson distribution

Indexed keywords

EID: 0036864434     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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