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Volumn 18, Issue 6, 2002, Pages

A robust CMOS bluetooth radio/modem system-on-chip

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; DIGITAL SIGNAL PROCESSING; FREQUENCY HOPPING; FREQUENCY SHIFT KEYING; LEAKAGE CURRENTS; MODEMS; PHASE LOCKED LOOPS; RADIO SYSTEMS; VARIABLE FREQUENCY OSCILLATORS;

EID: 0036864027     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2002.1175754     Document Type: Article
Times cited : (7)

References (11)
  • 1
    • 85008048461 scopus 로고    scopus 로고
    • A survey of circuit innovations in ferroelectric random-access memories
    • A. Sheikholeslami P. G. Gulak A survey of circuit innovations in ferroelectric random-access memories Proc. IEEE 88 667 689 May 2000
    • (2000) Proc. IEEE , vol.88 , pp. 667-689
    • Sheikholeslami, A.1    Gulak, P.G.2
  • 2
    • 0012066976 scopus 로고    scopus 로고
    • Emerging Memories: Technologies and Trends
    • Kluwer MA, Norwell
    • B. Prince Emerging Memories: Technologies and Trends 2002 Kluwer MA, Norwell
    • (2002)
    • Prince, B.1
  • 4
    • 0033296404 scopus 로고    scopus 로고
    • Modeling of depolarization in ferroelectric thin films
    • S. Sun P. A. Fuierer Modeling of depolarization in ferroelectric thin films Integrated Ferroelectrics 23 45 64 1999
    • (1999) Integrated Ferroelectrics , vol.23 , pp. 45-64
    • Sun, S.1    Fuierer, P.A.2
  • 5
    • 21544435221 scopus 로고
    • Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics
    • D. Dimos W. L. Warren M. B. Sinclair B. A. Tuttle R. W. J. Schwartz Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics Appl. Phys. 76 4305 1994
    • (1994) Appl. Phys. , vol.76 , pp. 4305
    • Dimos, D.1    Warren, W.L.2    Sinclair, M.B.3    Tuttle, B.A.4    Schwartz, R.W.J.5
  • 6
    • 85177123484 scopus 로고    scopus 로고
    • Material process requirements for ferroelectric nonvolatile memory (FRAM) Technology
    • RI
    • G. R. Fox R. Bailey B. Kraus F. Chu S. Sun T. Davenport Material process requirements for ferroelectric nonvolatile memory (FRAM) Technology Proc. 10th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Providence Proc. 10th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Providence RI 2001-Sept.-26-29
    • (2001)
    • Fox, G.R.1    Bailey, R.2    Kraus, B.3    Chu, F.4    Sun, S.5    Davenport, T.6
  • 7
    • 85177108859 scopus 로고    scopus 로고
    • Modeling ferroeletric capacitor switching using a parallel-elements model
    • B. Jiang J. Lee P. Zurcher Modeling ferroeletric capacitor switching using a parallel-elements model International Symposium on Integrated Ferroelectronics (ISIF) International Symposium on Integrated Ferroelectronics (ISIF) 1996-April-18-20
    • (1996)
    • Jiang, B.1    Lee, J.2    Zurcher, P.3
  • 8
    • 85177139056 scopus 로고    scopus 로고
    • HSIM2.0 User Manual 2002 Nassda Corporation www.nassda.com
    • (2002)
  • 9
    • 85177108086 scopus 로고    scopus 로고
    • SmartSpice User Manual 2002 Silvaco International www.silvaco.com
    • (2002)
  • 10
    • 0012066325 scopus 로고    scopus 로고
    • Electrically activated rejuvenation of retention thermally imprint plzt capacitors
    • S. Sun Electrically activated rejuvenation of retention thermally imprint plzt capacitors J. Integrated Ferroelectrics
    • J. Integrated Ferroelectrics
    • Sun, S.1
  • 11
    • 0028438589 scopus 로고
    • A ferroelectric capacitor macromodel and parameterization algorithm for spice simulation
    • D. E. Dunn A ferroelectric capacitor macromodel and parameterization algorithm for spice simulation IEEE Trans. Ultrason., Ferroelect., Freq. Contr. 41 360 369 May 1994
    • (1994) IEEE Trans. Ultrason., Ferroelect., Freq. Contr. , vol.41 , pp. 360-369
    • Dunn, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.