Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

Semiconductor Science and Technology

Volumn 17, Issue 11, 2002, Pages

  Shen, J L ^a   Lee, Y C ^a   Shu, G W ^a   Chou, W C ^a   Uen, W Y ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; INTERFACES (MATERIALS); PHOTOCONDUCTIVITY; RELAXATION PROCESSES; SURFACES; TEMPERATURE;

DECAY-TIME CONSTANT; ELECTRON-CAPTURE BARRIER; EPITAXIAL LAYERS; STRETCH-EXPONENTIAL FUNCTION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036852918     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/11/102     Document Type: Letter

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