Structural and electrical properties of cubic boron nitride thin films on (100)GaAs

Semiconductor Science and Technology

Volumn 17, Issue 11, 2002, Pages 1141-1143

  Chore, S M ^a   Chaudhari, G N ^a   Manorama, S V ^b   Bath, A ^c  

^a Department of Chemistry   (India)

^b INDIAN INSTITUTE OF CHEMICAL TECHNOLOGY   (India)

^c UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIODES; ELECTRON BEAMS; PERMITTIVITY; SEMICONDUCTING BORON; STOICHIOMETRY; THIN FILMS; X RAY DIFFRACTION;

CUBIC BORON NITRIDE THIN FILMS; METAL-INSULATOR SEMICONDUCTOR STRUCTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036851057     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/11/301     Document Type: Article

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