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Volumn 41, Issue 10, 2002, Pages 6089-6093

Charge compensation in lead tungstate crystals doped with aliovalent ion

Author keywords

Charge compensation; Defect; Doping; Interstitial oxygen; Lead tungstate

Indexed keywords

ANNEALING; DEFECTS; DOPING (ADDITIVES); HIGH TEMPERATURE PROPERTIES; OXYGEN; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036818928     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6089     Document Type: Article
Times cited : (4)

References (24)
  • 15
    • 0006136066 scopus 로고
    • (Publishing Company of Beijing University, Beijing)
    • M. Z. Su: Introduction to Solid State Chemistry (Publishing Company of Beijing University, Beijing, 1986) p. 127.
    • (1986) Introduction to Solid State Chemistry , pp. 127
    • Su, M.Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.