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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6893-6895

Doping mechanisms of La, Y and excess oxygen in PbWO4

(4) Li, Wen Sheng a Tang, Tong B a Huang, Hong Wei a Feng, Xi Qi a,b

a HONG KONG BAPTIST UNIVERSITY (Hong Kong)

b SHANGHAI INSTITUTE OF CERAMICS (China)

Author keywords

Defect complex; Dielectric relaxation; Doping mechanism; Lead tungstate; Oxygen annealing

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIELECTRIC RELAXATION; DIFFERENTIAL THERMAL ANALYSIS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; PARTICLE DETECTORS; SCINTILLATION; SPECTROSCOPIC ANALYSIS; THERMOGRAVIMETRIC ANALYSIS; ULTRAVIOLET RADIATION;

DOPING MECHANISM; INTERSTITIAL SITES; LEAD TUNGSTATE;

LEAD COMPOUNDS;

EID: 0035711876 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6893 Document Type: Article

Times cited : (23)

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