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Physica Status Solidi (A) Applied Research

Volumn 193, Issue 3, 2002, Pages 535-540

Electronic properties of several (100) surfaces and interfaces of boron doped homoepitaxial diamond thin films

(2) Muret, P a Saby, Ch a

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIAMOND FILMS; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FERMI LEVEL; HYDROGENATION; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

HOMOEPITAXIAL DIAMOND FILMSS;

THIN FILMS;

EID: 0036809134 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200210)193:3<535::AID-PSSA535>3.0.CO;2-H Document Type: Conference Paper

Times cited : (1)

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