Dependence of GaN photoluminescence on the excitation intensity

Semiconductors

Volumn 36, Issue 10, 2002, Pages 1128-1131

  Bessolov, V N ^a   Evstropov, V V ^a   Kompan, M E ^a   Mesh, M V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036808390     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1513856     Document Type: Article

References (9)

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