Behaviors of hydrogen in C-SiC films with IR and SIMS analyses

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 195, Issue 3-4, 2002, Pages 344-349

  Huang, N K ^a   Yang, B ^a   Xiong, Q ^a   Liu, Y G ^a   Wang, D Z ^a   Lei, J R ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

C SiC film; H+ ion implantation; IR spectra; SIMS

Indexed keywords

ANNEALING; HYDROGEN; INFRARED SPECTROSCOPY; ION BOMBARDMENT; ION IMPLANTATION; MAGNETRON SPUTTERING; PROTECTIVE COATINGS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; STAINLESS STEEL; SUBSTRATES;

VIBRATIONAL SPECTRA;

PLASMA DEVICES;

EID: 0036800188     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01142-4     Document Type: Article

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