Low field excitonic Zeeman splittings in gallium nitride

Solid State Communications

Volumn 124, Issue 3, 2002, Pages 89-92

  Golnik, A ^a   Mac, W ^a   Pakula K ^a   Stepniewski R ^a   Testelin, C ^b   Gaj, J A ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b Groupe de Physique des Solides des Universites   (France)

Author keywords

A. III V semiconductors; B. Epitaxy; D. Optical properties; E. Light absorption and reflection

Indexed keywords

BINDING ENERGY; EXCITONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL KERR EFFECT; PARAMETER ESTIMATION; SUBSTRATES;

KERR ROTATION;

GALLIUM NITRIDE;

EID: 0036793402     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00477-5     Document Type: Article

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