Promising window layer of thin film Si solar cell with p-i-n structure prepared by using SiH2Cl2

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 429-437

  Nakashima, T ^a   Kondo, M ^b   Matsuda, A ^b  

^a SANYO ELECTRIC CO LTD   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

a Si:H:(Cl); P i n type; P layer; SiH2Cl2; Suppression of darkening; Wide optical gap

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; THIN FILMS;

OPTICAL GAPS;

SILICON SOLAR CELLS;

EID: 0036777768     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00116-2     Document Type: Article

References (4)

1. High absorption-coefficient and stable a-Si for high efficiency solar cells
2. 2 by means of a different surface chemistry using dichlorosilane
3. 2
4. Effect of substrate surface morphology on microcrystalline silicon solar cells