SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 299-305

Low resistivity α-tantalum in Cu/CVD low-k (Orion™) integration

(4) Donohue, H a Yeoh, J C a Giles, K a Buchanan, K a

a Trikon Technologies (United Kingdom)

Author keywords

Diffusion barrier; Low k dielectric; Resistivity; Ta

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; COPPER; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC CONDUCTIVITY; ION BOMBARDMENT; METALLIZING; PHYSICAL VAPOR DEPOSITION; SPUTTERING; SUBSTRATES; TEXTURES;

DIFFUSION BARRIERS;

TANTALUM;

EID: 0036776428 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(02)00802-X Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.