Multistate per-cell magnetoresistive random-access memory written at curie point

IEEE Transactions on Magnetics

Volumn 38, Issue 5 I, 2002, Pages 2850-2852

  Zheng, Y K ^a   Wu, Y H ^a,b   Guo, Z B ^a   Han, G C ^a   Li, K B ^a   Qiu, J J ^a   Xie, H ^a,c   Luo, P ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SurroMed Pte Ltd   (Singapore)

Author keywords

Giant magnetoresistance; Magnetic tunnel junctions; Magnetoresistive random access memory; Spin valves; Thermal assistant writing

Indexed keywords

FABRICATION; FERROMAGNETISM; LITHOGRAPHY; MAGNETIC MOMENTS; MAGNETIZATION; SIGNAL TO NOISE RATIO; SPUTTERING;

MAGNETIC TUNNEL JUNCTIONS;

GIANT MAGNETORESISTANCE;

EID: 0036761719     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2002.802858     Document Type: Article

References (3)

1. W.-C. Jeong, B.-L. Lee, and S.-K. Joo, "Three level, six state multistate magneto-resistive RAM (MRAM)," J. Appl. Phys., vol. 85, pp. 4782-4784, 1999.
2. P.K. Naji, "MTJ stacked cell memory sensing method and apparatus," U.S Patent. no. 6 169 689, Jan. 2, 2001.
3. R.S. Beech, J.A. Anderson, A.V. Pohm, and J.M. Daughton, "Curie point written magnetoresistive memory," J. Appl. Phys., vol. 87, pp. 6403-6405, 2000.