'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs

Electronics Letters

Volumn 34, Issue 20, 1998, Pages 1974-1976

  Santarelli, A ^a   Filicori, F ^b   Vannini, G ^a,b   Rinaldi, P ^b  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; MATHEMATICAL MODELS;

BACKGATING; LOW FREQUENCY DISPERSIVE EFFECTS; SELF HEATING;

FIELD EFFECT TRANSISTORS;

EID: 0032180639     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981351     Document Type: Article

References (6)

1. FILICORI, F., VANNINI, G., SANTARELLI, A., MEDIAVILLA, A., TAZON, A., and NEWPORT, Y.: 'Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs', IEEE Trans., 1995, MTT-43, (12), pp. 2972-2981
2. SANTARELLI, A., VANNINI, G., BORGARINO, M., MENOZZI, R., BAYENS, Y., and VAN DER ZANDEN, K.: 'Modelling of low-frequency dispersive effects in GaAs and InP HEMTs'. Proc. GAAS'97, 1997, pp. 131-134
3. SCHEINBERG, N., BAYRUNS, R., and GOYAL, R.: 'A low frequency GaAs MESFET circuit model', IEEE J. Solid-State Circuits, 1988, 23, (2), pp. 605-608
4. FIEGNA, C., FILICORI, F., VANNINI, G., and VENTURI, F.: 'Modeling the effects of traps on the IV-characteristics of GaAs MESFETs'. Proc. 1995 IEEE IEDM, 1995, pp. 773-776
5. JEON, K., KWON, Y., and HONG, s.: 'A frequency dispersion model of GaAs MESFET for large-signal applications', IEEE MGWL, 1997, 7, (3), pp. 78-80
6. ROH, T., KIM, Y., SUH, Y., PARK, W., and KIM, B.: 'A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena', IEEE Trans., 1997, MTT-45, (8), pp. 1252-1255