Growth and characterization of zirconium oxynitride films prepared by reactive direct current magnetron sputtering

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2461-2466

  Venkataraj, S ^a,b   Kappertz, O ^a   Jayavel, R ^b   Wuttig, M ^a,c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b ANNA UNIVERSITY   (India)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; CUBIC ZIRCONIUM NITRIDE; DIRECT CURRENT MAGNETRON SPUTTERING; FILM DENSITY; FILM ROUGHNESS; FILM STRUCTURE; NITROGEN CONTENT; NITROGEN FLOW; NITROGEN INCORPORATION; OPTICAL SPECTROSCOPY; OXYNITRIDE FILMS; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; SI (100) SUBSTRATE; TRANSPARENT FILMS; X-RAY REFLECTOMETRY; XRD; ZIRCONIUM OXYNITRIDES;

MAGNETRON SPUTTERING; NITRIDES; NITROGEN; OXYGEN; REFLECTION; REFLECTOMETERS; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZIRCONIUM;

FILM PREPARATION;

EID: 0036732206     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498963     Document Type: Article

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