Difference of Bi2O3 doping effect between vapor process and solid process on Ba1-xSrxTiO3 esmiconducting ceramics

Materials Science and Engineering: B

Volumn 95, Issue 3, 2002, Pages 283-286

  Qi, Jianquan ^a   Gui, Zhilun ^a   Wang, Yongli ^a   Wu, Yajing ^a   Li, Longtu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

BaTiO3; Bi2O3; Ceramics; Doping process; Positive temperature coefficient resistance; Semiconductor

Indexed keywords

BARIUM TITANATE; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE MEASUREMENT; GRAIN BOUNDARIES; OXIDATION; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; SOLIDS;

POSITIVE TEMPERATURE COEFFICIENT RESISTANCES (PTCR); VAPOR DOPING METHODS;

CERAMIC MATERIALS;

EID: 0036723163     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00287-8     Document Type: Article

References (8)