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Physica B: Condensed Matter

Volumn 322, Issue 1-2, 2002, Pages 146-153

Porous Si formation and study of its structural and vibrational properties

(6) Patel, B K a Mythili, R b Vijayalaxmi, R b Soni, R K c Behera, S N a Sahu, S N a

a INSTITUTE OF PHYSICS (India)

b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

c INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

Etching; Porous Si; Raman scattering

Indexed keywords

ANODIC OXIDATION; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTROLYTIC POLISHING; ELECTRON DIFFRACTION; LATTICE VIBRATIONS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

TRANSMISSION ELECTRON DIFFRACTION (TED);

POROUS SILICON;

EID: 0036720759 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(02)01175-4 Document Type: Article

Times cited : (11)

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