Annealing temperature dependence of the amorphous structure of amorphous Si-Ge-Au thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5336-5337

  Lee, Sang Min ^a   Okamoto, Yoichi ^a   Kawahara, Toshio ^a   Morimoto, Jun ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

Amorphous; Si Ge Au; Thermal annealing temperature; Thermoelectrics

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; GERMANIUM; GOLD; SILICON; THERMAL EFFECTS;

AMORPHOUS THIN FILMS;

THIN FILMS;

EID: 0036698445     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5336     Document Type: Article

References (4)

1. Y. Okamoto, H. Uchino, T. Kawahara and J. Morimoto: Jpn. J. Appl. Phys. 38 (1999) L945.
2. H. Uchino, Y. Okamoto, T. Kawahara and J. Morimoto: Jpn. J. Appl. Phys. 39 (2000) 1675.
3. S.M. Lee, Y. Okamoto, T. Kawahara and J. Morimoto: Proc. 20th Int. Conf. Thermoelectrics, Beijing, 2001 (China, 2001), to be published.
4. K. Fukushima and N. Kondo: Jpn. J. Appl. Phys. 40 (2001) 3226.