Electronic structure calculations for Au-doped Ge and Si with a possible high thermoelectric power

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3226-3230

  Fukushima, K ^a   Kondo, N ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Au; Electronic structure; Ge Si; Molecular orbital method; Thermoelectric power

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; GOLD; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

MOLECULAR ORBITAL METHODS; THERMOELECTRIC POWER;

ELECTRONIC STRUCTURE;

EID: 0035328729     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3226     Document Type: Article

References (10)