High-temperature thick Al wire bonding technology for high-power modules

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5030-5033

  Komiyama, Takao ^a   Chonan, Yasunori ^a   Onuki, Jin ^b   Koizumi, Masahiko ^b   Shigemura, Tatsuya ^c  

^a AKITA PREFECTURAL UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

^c IBARAKI UNIVERSITY   (Japan)

Author keywords

High temperature; Shear strength; Si damage; Thick Al wire bonding technology; Ultrasonic power

Indexed keywords

ALUMINUM; BONDING; DEFORMATION; ELECTRODES; MICROPROCESSOR CHIPS; SHEAR STRENGTH; WIRE;

ULTRASONIC POWER;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036697536     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5030     Document Type: Article

References (14)

1. J. Kassakian, M. Schlecht and G. Verghese: Principles of Power Electronics (Addison-Wesley, Boston, 1991) Chap. 16.
2. M. Mori, R. Saitou and T. Yatsuo: Proc, 5th ISPSD, 1993 p. 287.
3. R. Saitou and M. Mori: OHM 81 (1994) 33 [in Japanese].
4. Y. Takahashi, T. Koga, H. Kirihara and Y. Seki: Proc. 6th ISPSD, 1994, p. 25.
5. W. Wu, M. Held, P. Jacob, P. Scacco and A. Birolini: Proc. 7th ISPSD, 1995, p. 330.
6. J. Onuki, Y. Chonan, T. Komiyama, M. Nihei, R. Saitou, M. Suwa and T. Morita: Jpn. J. Appl. Phys. 40 (2000) 3985.
7. G. Harman: Wire Bonding in Microelectronics (McGraw-Hill, New York) 2nd. ed., Chap. 4. 1997.
8. C. Hager: Lifetime Estimation of Aluminum Wire Bonds Based on Computational Plasticity (Hartung-Gorre, Konstanz, 2000) Chap. 2.
9. J. Onuki and M. Koizumi: Mater. Trans., JIM 37 (1996) 1319.
10. M. Tatsukawa, T. Umegaki, M. Kikuchi, K. Yoshikoshi and A. Tamenori: Proc. 7th Mate, 2001, p. 5.
11. J. Onuki, M. Koizumi and J. Echigoya: Mater. Trans., JIM 37 (1996) 1324.
12. O. Umezawa: Kei Kinzoku 50 (2000) 86 [in Japanese].
13. O. Umezawa: Netsu Syori 41 (2000) 248 [in Japanese].
14. J. Onuki, M. Koizumi and M, Suwa: IEEE Trans. Adv. Pack. 23 (2000) 108.