SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 33, Issue 8, 2002, Pages 663-671

Oxygen beam SIMS depth profiling of Si1-xGex layers: Transient processes

(7) Krger, D a,c Efremov, A A a Murota, J a Kurps, R a Bugiel, E a Tillack, B b Romanova, G Ph a

a IHP (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

c TOHOKU UNIVERSITY (Japan)

Author keywords

Depth profiling; Implantation; Oxygen; Silicon germanium; SIMS

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

EPITAXIAL LAYERS;

SURFACE CHEMISTRY;

EID: 0036686194 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1472 Document Type: Article

Times cited : (7)

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