Hybrid modelocking of semiconductor ring lasers incorporating passive deep-ridge waveguides

Electronics Letters

Volumn 38, Issue 16, 2002, Pages 884-886

  Ohno, T ^a   Ishii, H ^a   Matsuo, S ^a   Okamoto, H ^a   Kawaguchi, Y ^a   Kondo, Y ^a   Furuta, T ^a   Ito, H ^a   Yoshikuni, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; FABRICATION; FREQUENCIES; LASER MODE LOCKING; LIGHT MODULATION; MILLIMETER WAVES; OPTICAL WAVEGUIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

RING MODELOCKED LASERS (R-MLLD);

RING LASERS;

EID: 0036684613     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020642     Document Type: Article

References (8)

1. Single channel 400 Gbit/s time-division-multiplexed transmission of 0.98 ps pulses over 40 km employing dispersion slope compensation
2. Millimeter-wave fiber optics systems for personal radio communication
3. Actively mode-locked strained-InGaAsP multiquantum-well lasers integrated with electroabsorption modulators and distributed Bragg reflectors
4. A 1.54-μm monolithic semiconductor ring laser: CW and mode-locked operatio
5. Mode-locking in semiconductor ring lasers with two saturable absorbers
6. 2 gas
7. Monolithically integrated WDM channel selectors on InP substrates
8. A strained-layer InGaAs-GaAs buffed heterostructure circular ting laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition