Actively mode-locked strained-InGaAsP multiquantum-well lasers integrated with electroabsorption modulators and distributed Bragg reflectors

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 3, 1996, Pages 557-564

  Sato, Kenji ^a,b,c,d   Kotaka, Isamu ^a   Kondo, Yasuhiro ^a,d   Yamamoto, Mitsuo ^a  

^a NTT CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; LASER MODE LOCKING; LIGHT PULSE GENERATORS; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DISTRIBUTED BRAGG REFLECTORS; ELECTROABSORPTION MODULATORS;

QUANTUM WELL LASERS;

EID: 0030230119     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.571755     Document Type: Article

References (21)

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