High performance InP Gunn devices with 34 mW at 193 GHz

Electronics Letters

Volumn 38, Issue 16, 2002, Pages 923-924

  Eisele, Heribert ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT LOSSES; SECOND HARMONIC GENERATION; SEMICONDUCTING DIAMONDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

PHASE NOISE;

GUNN DEVICES;

EID: 0036683811     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020612     Document Type: Article

References (8)

1. Terahertz technology
2. High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz)
3. Second-harmonic power extraction from InP Gum devices with more than 1 mW in the 260-320 GHz frequency range
4. Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz
5. Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
6. High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz
7. A 200-GHz broadband fixed-tuned, planar doubler
8. Frequency multipliers for millimeter and submillimeter wavelengths