Carrier density control of Bi-2212 whiskers

Physica C: Superconductivity and its Applications

Volumn 372-376, Issue PART 1, 2002, Pages 335-338

  Inomata, K ^a   Kawae, T ^a   Kim, S J ^b   Nakajima, K ^a,b   Yamashita, T ^a,b   Nagao, M ^c   Maeda, H ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi 2212 whiskers; C axis length; Carrier density; Critical current density; Intrinsic Josephson junctions; Junction resistance; Oxygen content

Indexed keywords

BISMUTH COMPOUNDS; CARRIER CONCENTRATION; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON TUNNELING; HIGH TEMPERATURE SUPERCONDUCTORS; JOSEPHSON JUNCTION DEVICES; OXYGEN; SUPERCONDUCTING TRANSITION TEMPERATURE;

JUNCTION RESISTANCE;

CRYSTAL WHISKERS;

EID: 0036682899     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(02)00663-9     Document Type: Conference Paper

References (11)