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Journal of Luminescence

Volumn 99, Issue 1, 2002, Pages 19-28

Impurity-induced resonance Raman scattering at the (e,A0) threshold in lightly carbon-doped p-type GaAs at 2 K

(2) Huang, Q a,b Ulbrich, R G a

a UNIVERSITY OF GÖTTINGEN (Germany)

b UNIVERSITY OF PUERTO RICO (Puerto Rico)

Author keywords

Impurities; Phonons; Photoluminescence; Raman scattering; Semiconductors

Indexed keywords

CARBON; IMPURITIES; LASER BEAM EFFECTS; OSCILLATIONS; PHONONS; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

RESONANCE RAMAN SCATTERING (RRS);

PHOTOLUMINESCENCE;

EID: 0036679994 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(02)00321-6 Document Type: Article

Times cited : (8)

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