Molecular control of the threshold voltage of an NMOS inversion layer

Microelectronic Engineering

Volumn 63, Issue 1-3, 2002, Pages 135-139

  Yang, Jinman ^a   Thornton, T J ^a   Kozicki, M ^a   De la Garza, L ^b   Gust, D ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electron transport; Molecular electronics; SOI

Indexed keywords

CHEMICAL BONDS; ELECTRIC CHARGE; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; MONOLAYERS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; THRESHOLD VOLTAGE;

MOLECULAR ELECTRONICS;

MOSFET DEVICES;

EID: 0036679602     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00634-2     Document Type: Conference Paper

References (6)

1. Molecular control over Au/GaAs diodes
2. Molecular electronic tuning of Si surfaces
3. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
4. Buried channel SOI MOSFETs for hot electron spectroscopy
5. Extraction of the oxide charges at the silicon-substrate interface in SOI MOSFETS