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Microelectronic Engineering

Volumn 63, Issue 1-3, 2002, Pages 97-103

Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: The quantum potential approach

(2) Barker, John R a Watling, Jeremy R a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

Density gradient; Semiconductor devices; Traversal time; Wigner function

Indexed keywords

ELECTRIC CHARGE; HAMILTONIANS; KINETIC ENERGY; MONTE CARLO METHODS; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS;

DENSITY GRADIENT;

HETEROJUNCTIONS;

EID: 0036679589 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(02)00637-8 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.