SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1718-1720

  Li, Cheng ^a   Huang, C J ^a   Cheng, Buwen ^a   Zuo, Yuhua ^a   Luo, Liping ^a   Yu, Jinzhong ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

RESONANT CAVITY ENHANCED PHOTODETECTORS; SEPARATION-BY-IMPLANTED-OXYGEN WAFERS; SIGE/SI; WAFER BONDING TECHNIQUES;

FULL WIDTH AT HALF MAXIMUM; PHOTODETECTORS;

FABRICATION;

EID: 0036678935     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492868     Document Type: Article

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