Spin-dependent recombination in strained Si under fields of 1-30 MHz range

Advanced Engineering Materials

Volumn 4, Issue 8, 2002, Pages 598-600

  Kozonushchenko, O I ^a   Kislyuk, V V ^a   Barabanov, A V ^a   Tretyak, O V ^a  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DISLOCATIONS (CRYSTALS); ELECTRONS; MAGNETIC PROPERTIES; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; SILICON WAFERS; STRAIN; VECTORS;

SPIN-DEPENDENT RECOMBINATION (SDR);

MATERIALS SCIENCE;

EID: 0036670734     PISSN: 14381656     EISSN: None     Source Type: Journal    
DOI: 10.1002/1527-2648(20020806)4:8<598::AID-ADEM598>3.0.CO;2-F     Document Type: Conference Paper

References (13)