Time domain global modelling of EM propagation in semiconductor using irregular grids

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 15, Issue 4, 2002, Pages 355-370

  Tsai, Hsiao Ping ^a   Coccioli, Roberto ^a,b   Itoh, Tatsuo ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Global modelling; Semiconductor device simulation; Time domain analysis

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; FINITE VOLUME METHOD; MAXWELL EQUATIONS; MICROWAVES; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TIME DOMAIN ANALYSIS; TOPOLOGY; TRANSPORT PROPERTIES;

GLOBAL MODELING; IRREGULAR GRIDS;

ELECTROMAGNETIC WAVE PROPAGATION;

EID: 0036646611     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.458     Document Type: Article

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