A resonant tunneling diode based on a Ga1-xMnxAs/GaAs double barrier structure

Physica B: Condensed Matter

Volumn 320, Issue 1-4, 2002, Pages 396-399

  Makler, S S ^a,b   Boselli, M A ^a   Weberszpil, J ^c   Wang, X F ^a,d   Da Cunha Lima, I C ^a  

^a STATE UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

^c DEPARTAMENTO DE CIÊNCIAS BIOLÓGICAS   (Brazil)

^d Gina Cody School of Engineering and Computer Science   (Canada)

Author keywords

Nanostructures; Semiconductors; Spintronics

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; FERROMAGNETIC MATERIALS; MAGNETIZATION; NANOSTRUCTURED MATERIALS; OPEN SYSTEMS; POLARIZATION; RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

SPINTRONICS;

TUNNEL DIODES;

EID: 0036646393     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)00757-3     Document Type: Article

References (4)