Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 533-537

  Kuo, M C ^a   Yang, C S ^a   Tseng, P Y ^a   Lee, J ^a   Shen, J L ^a   Chou, W C ^a   Shih, Y T ^b   Ku, C T ^c   Lee, M C ^c   Chen, W K ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting II IV materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE STRUCTURE;

BUFFER LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 0036645158     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01421-5     Document Type: Article

References (14)